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Post# E22752

01 Jan, 21 - 01 Dec, 22
GaN epi on sapphire (Xiamen, Fujian)

Posted on: Saturday, 25 September, 2021  11:16
Updated On: Saturday, 25 September, 2021  11:16
Expires On: Friday, 21 June, 2024  11:16
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Gallium nitride (GaN) is a hard, mechanically stable wide bandgap semiconductor. http://https://www.ganwafer.com/product/gan-epi-on-sapphire-silicon » significantly outperforms silicon-based devices based on having faster switching speed, higher thermal conductivity, higher breakdown strength, and lower on-resistance, power devices. On a variety of substrates, including sapphire, silicon carbide (SiC), and silicon (Si) Gallium nitride crystals can be grown. On top of silicon by growing a GaN epi layer you can use the existing silicon manufacturing infrastructure in eliminating the need for costly specialized production sites and at low cost, it leverages readily available large-diameter silicon wafers.

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